SIMPLE SYSTEM FOR BROAD-BAND SINGLE-MODE TUNING OF DH GAALAS LASERS

被引：12

作者：

RENNER, D

CARROLL, JE

机构：

[1] Department of Engineering, University of Cambridge

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 03期

关键词：

Semiconductor junction lasers;

D O I：

10.1049/el:19790053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spectral behaviour of GaAlAs lasers with external feedback surfaces is reported. Flat and 60 µm radius spherical mirrors near the emitting area have been used. Single-mode tunable emission over ½% bandwidth (43.6 Å) has been achieved. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

收藏

页码：73 / 74

页数：2

相关论文

共 7 条

[1] STUDY OF SINGLE-MODE INJECTION LASER [J].

BOGATOV, AP ;

ELISEEV, PG ;

IVANOV, LP ;

LOGGINOV, AS ;

MANKO, MA ;

SENATOROV, KY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :392-394

[2] DISCRIMINATION AGAINST UNWANTED ORDERS IN FABRY-PEROT RESONATOR [J].

KLEINMAN, DA ;

KISLIUK, PP .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :453-+

[3] GAIN PROFILE AND TIME-DELAY EFFECTS IN EXTERNAL-CAVITY-CONTROLLED GAAS LASERS [J].

ROSSI, JA ;

HSIEH, JJ ;

HECKSCHER, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :538-545

[4] HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS [J].

ROSSI, JA ;

CHINN, SR ;

HECKSCHER, H .

APPLIED PHYSICS LETTERS, 1973, 23 (01) :25-27

[5] MODE SELECTION IN LASERS [J].

SMITH, PW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (04) :422-+

[6] SINGLE-MODE OPERATION OF DIODE LASERS COUPLED TO HEMISPHERICAL RESONATORS [J].

VOUMARD, C ;

SALATHE, R ;

WEBER, H .

OPTICS COMMUNICATIONS, 1975, 13 (02) :130-133

[7] RESONANCE AMPLIFIER MODEL DESCRIBING DIODE-LASERS COUPLED TO SHORT EXTERNAL RESONATORS [J].

VOUMARD, C ;

SALATHE, R ;

WEBER, H .

APPLIED PHYSICS, 1977, 12 (04) :369-378