HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS

被引：48

作者：

ROSSI, JA ^{[1
]}

CHINN, SR ^{[1
]}

HECKSCHER, H ^{[1
]}

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 01期

关键词：

D O I：

10.1063/1.1654723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：25 / 27

页数：3

共 15 条

[1]

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[2]

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[8]

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[9] CATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

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[10] TUNABLE GAAS LASER IN AN EXTERNAL DISPERSIVE CAVITY [J].

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APPLIED PHYSICS LETTERS, 1972, 20 (12) :499-&

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