THRESHOLD AND MEMORY SWITCHING IN AMORPHOUS SELENIUM THIN-FILMS

被引：25

作者：

JONES, G

COLLINS, RA

机构：

[1] Department of Physics, University of Lancaster

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 53卷 / 01期

关键词：

D O I：

10.1002/pssa.2210530139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical switching in thin selenium films is studied. Devices with two metal electrodes are compared with those having one indium oxide contact. dc, single, and double pulse studies are utilised in conjunction with scanning electron microscopy in an attempt to investigate the structural and compositional changes occurring during switching. The results indicate that lock‐on and threshold switching are complementary processes and that the memory state is associated with metal ion diffusion. Thermal effects appear to be of importance in threshold switching. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：339 / 350

页数：12

共 33 条

[21] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].