INTERACTION BETWEEN ELECTRONIC AND VIBRONIC RAMAN-SCATTERING IN HEAVILY DOPED SILICON

被引：73

作者：

CERDEIRA, F ^{[1
]}

FJELDLY, TA ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,WEST GERMANY

来源：

关键词：

D O I：

10.1016/0038-1098(73)90602-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：325 / 328

页数：4

共 7 条

[1] BESERMAN R, 1972, 11TH P INT C PHYS SE, P1181
[2] VALENCE BAND STRUCTURE OF III-V COMPOUNDS
BRAUNSTEIN, R
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1423 - &
[3] EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE
CERDEIRA, F
CARDONA, M
[J]. PHYSICAL REVIEW B, 1972, 5 (04): : 1440 - &
[4] EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS
FANO, U
[J]. PHYSICAL REVIEW, 1961, 124 (06): : 1866 - &
[5] FJELDLY TA, 1973, SOLID STATE COMMUN, V12, P533
[6] RAMAN EFFECT IN CRYSTALS
LOUDON, R
[J]. ADVANCES IN PHYSICS, 1964, 13 (52) : 423 - &
[7] MILLS DL, 1971, 2ND P INT C LIGHT SC, P107