ELECTRON VOLTAIC EFFECTS IN SILICON AND SELENIUM ELEMENTS

被引：7

作者：

BILLINGTON, E

EHRENBERG, W

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1961年 / 78卷 / 504期

关键词：

D O I：

10.1088/0370-1328/78/5/330

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：845 / &

共 27 条

[1]

BECKER A, 1937, Z PHYS, V107, P476

[2]

BILLINGTON EW, 1960, DISSERTATION

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[4] THE ELECTRON VOLTAIC EFFECT [J].

EHRENBERG, W ;

LANG, CS ;

WEST, R .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (376) :424-424

[5] PROBING OF BARRIER LAYERS WITH AN ELECTRON BEAM [J].

EHRENBERG, W ;

LANG, CS .

PHYSICA, 1954, 20 (11) :1137-1138

[6] OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY OF AMORPHOUS AND HEXAGONAL SELENIUM [J].

GILLEO, MA .

JOURNAL OF CHEMICAL PHYSICS, 1951, 19 (10) :1291-1297

[7] POWER RECTIFIERS AND TRANSISTORS [J].

HALL, RN .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518

[8]

HALL RN, 1959, PROC INST RADIO S17, V106B, P923

[9] EINFLUSS VON DIFFUSIONSLANGE UND OBERFLACHENREKOMBINATION AUF DEN SPERRSCHICHT-PHOTOEFFEKT AN GERMANIUM [J].

HARTEN, HU ;

SCHULTZ, W .

ZEITSCHRIFT FUR PHYSIK, 1955, 141 (03) :319-334

[10]

HARTEN HU, 1959, PHILIPS RES REP, V14, P346

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