OXYGEN DEPTH PROFILING BY ACTIVATION WITH THE O-16(HE-3,P,)F-18 REACTION

被引:7
作者
ITOH, Y
NOZAKI, T
机构
来源
JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1982年 / 70卷 / 1-2期
关键词
D O I
10.1007/BF02516121
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
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页码:329 / 336
页数:8
相关论文
共 4 条
[1]   OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS [J].
GASS, J ;
MULLER, HH ;
STUSSI, H ;
SCHWEITZER, S .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2030-2037
[2]   YIELD OF F-18 FOR VARIOUS REACTIONS FROM OXYGEN AND NEON [J].
NOZAKI, T ;
IWAMOTO, M ;
IDO, T .
INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1974, 25 (09) :393-399
[3]   NEW RADIO-TRACER TECHNIQUE FOR EVAPORATION STUDY OF LIGHT ELEMENTS FROM MOLTEN SILICON [J].
NOZAKI, T ;
MAKIDE, Y ;
YATSURUGI, Y ;
AKIYAMA, N ;
ENDO, Y .
INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1971, 22 (10) :607-+
[4]  
PATEL JR, 1977, SEMICONDUCTOR SILICO, P521