OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS

被引：45

作者：

GASS, J ^{[1
]}

MULLER, HH ^{[1
]}

STUSSI, H ^{[1
]}

SCHWEITZER, S ^{[1
]}

机构：

[1] BROWN BOVERI CO LTD,BIRR,SWITZERLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.327922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2030 / 2037

页数：8

共 22 条

[1] TOTAL NEUTRON YIELDS FROM PROTON BOMBARDMENT OF O-17, O-18 [J].

BAIR, JK .

PHYSICAL REVIEW C, 1973, 8 (01) :120-123

[2]

BAIR JK, 1959, NUCL PHYS, V11, P254

[3] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&

[4]

BICHSEL H, 1967, UCRL17538 REP

[5]

BICHSEL H, 1972, AM I PHYSICS HDB, P8

[6] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J].

BOND, WL ;

KAISER, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :44-45

[7]

BRODSKY MH, 1975, TOPICS APPLIED PHYSI, V8, P216

[8] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) :873-&

[9] REACTIONS OF GROUP-III ACCEPTORS WITH OXYGEN IN SILICON CRYSTALS [J].

FULLER, CS ;

DOLEIDEN, FH ;

WOLFSTIRN, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) :187-203

[10] HE-3 INDUCED ACTIVATION CROSS-SECTIONS ON B-10, O-16 AND F-19 [J].

GASS, J ;

MULLER, HH .

NUCLEAR INSTRUMENTS & METHODS, 1976, 136 (03) :559-561

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