OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS

被引:45
作者
GASS, J [1 ]
MULLER, HH [1 ]
STUSSI, H [1 ]
SCHWEITZER, S [1 ]
机构
[1] BROWN BOVERI CO LTD,BIRR,SWITZERLAND
关键词
D O I
10.1063/1.327922
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2030 / 2037
页数:8
相关论文
共 22 条
[11]  
GASS J, 1977, THESIS U ZURICH
[12]  
GROVE AS, 1967, PHYS TECHNOL S, P38
[13]   THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM [J].
HAAS, C .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :108-111
[14]   THE SOLUBILITY OF OXYGEN IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) :214-216
[15]   ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].
KAISER, W .
PHYSICAL REVIEW, 1957, 105 (06) :1751-1756
[16]   DIFFUSION OF OXYGEN IN SILICON [J].
LOGAN, RA ;
PETERS, AJ .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) :1627-1630
[17]   ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION [J].
MINEAR, RL ;
GIBBONS, JF ;
NELSON, DG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3468-&
[18]  
SMAKULA A, 1958, J PHYS CHEM SOLIDS, V6, P45
[19]   SPUTTERING OF SILICON AND GERMANIUM BY MIDDLE-ENERGY HEAVY-IONS [J].
SOMMERFELDT, H ;
MASHKOVA, ES ;
MOLCHANOV, VA .
PHYSICS LETTERS A, 1972, A 38 (04) :237-+
[20]  
TAKANO Y, 1973, J ELECTROCHEM SOC, V120, P469