CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS

被引：32

作者：

BETTINI, M ^{[1
]}

BACHMANN, KJ ^{[1
]}

SHAY, JL ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.324617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：865 / 870

页数：6

共 37 条

[1] GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J].

ANDERSON, RL .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :283-287

[2] LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS [J].

BACHMANN, KJ ;

BUEHLER, E ;

SHAY, JL ;

STRNAD, AR .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :389-406

[3] PREPARATION OF CDS-INP SOLAR-CELLS BY CHEMICAL VAPOR-DEPOSITION OF CDS [J].

BETTINI, M ;

BACHMANN, KJ ;

BUEHLER, E ;

SHAY, JL ;

WAGNER, S .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1603-1606

[4] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LIQUID-PHASE EPITAXY [J].

BLOM, GM ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :373-&

[5] CARRIER GENERATION-RECOMBINATION IN SPACE-CHARGE REGION OF AN ASYMMETRICAL P-N JUNCTION [J].

CHOO, SC .

SOLID-STATE ELECTRONICS, 1968, 11 (11) :1069-+

[6] PHOTOVOLTAGE STUDIES OF CLEAN AND OXYGEN COVERED GALLIUM-ARSENIDE [J].

DAHLBERG, SC .

SURFACE SCIENCE, 1976, 59 (01) :83-96

[7] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J].

ETTENBERG, M ;

KRESSEL, H ;

GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :827-831

[8] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP [J].

FISCHER, TE .

PHYSICAL REVIEW, 1966, 142 (02) :519-&

[9]

GOBELI GW, 1965, PHYS REV A, V137, P245

[10]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

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