PHOTOVOLTAGE STUDIES OF CLEAN AND OXYGEN COVERED GALLIUM-ARSENIDE

被引：35

作者：

DAHLBERG, SC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SURFACE SCIENCE | 1976年 / 59卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90293-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：83 / 96

页数：14

共 33 条

[1] ADSORPTION AND DESORPTION OF O2 ON GAAS [111] SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :4023-+

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[3] DETERMINATION OF SURFACE STATE ENERGY POSITIONS BY SURFACE PHOTOVOLTAGE SPECTROMETRY - CDS [J].

BALESTRA, C ;

LAGOWSKI, J ;

GATOS, HC .

SURFACE SCIENCE, 1971, 26 (01) :317-&

[4] SURFACE PHOTOVOLTAGE AND AUGER-SPECTROSCOPY STUDIES OF (1120) CDS SURFACE [J].

BRILLSON, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :249-252

[5] OBSERVATION OF EXTRINSIC SURFACE STATES ON (1120) CDS [J].

BRILLSON, LJ .

SURFACE SCIENCE, 1975, 51 (01) :45-60

[6] SURFACE PHOTOVOLTAGE SPECTROSCOPY OF ELECTRONIC SURFACE STATES ON CLEAVED GERMANIUM (111) SURFACES [J].

BUCHEL, M ;

LUTH, H .

SURFACE SCIENCE, 1975, 50 (02) :451-464

[7] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].

DINAN, JH ;

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1971, 26 (02) :587-&

[8] ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES [J].

DORN, R ;

LUTH, H ;

RUSSELL, GJ .

PHYSICAL REVIEW B, 1974, 10 (12) :5049-5056

[9]

FLINN L, 1964, SURFACE SCIENCE, V2, P136

[10] TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1972, 30 (01) :185-&

← 1 2 3 4 →