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MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GAAS USING SCANNING ELECTRON MICROSCOPE

被引：15
作者：
WOLF, ED
HUNSPERGER, RG
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 12期
关键词：
D O I：
10.1063/1.1653092
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：526 / +
页数：1
相关论文
共 6 条
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[2]  
COATES DG, 1969, 2 P ANN SCANN EL MIC, P29
[3]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
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ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[4]  
WESTMORELAND E, UNPUBLISHED
[5]   ELECTRON BEAM CHANNELING IN SINGLE-CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY [J].
WOLF, ED ;
EVERHART, TE .
APPLIED PHYSICS LETTERS, 1969, 14 (10) :299-&
[6]   PSEUDO-KIKUCHI PATTERN DEGRADATION BY A THIN AMORPHOUS SILICON FILM [J].
WOLF, ED ;
BRAUNSTE.M ;
BRAUNSTE.AI .
APPLIED PHYSICS LETTERS, 1969, 15 (12) :389-&
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