PREPARATION OF YBA2CU3O7-Y HIGH-TC THIN-FILMS ON NDGAO3 SUBSTRATE BY LASER ABLATION

被引:43
作者
MUKAIDA, M
MIYAZAWA, S
SASAURA, M
KURODA, K
机构
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 06期
关键词
High T[!sub]c[!/sub; Laser ablation; NdgaO[!sub]3[!/sub] substrates; Oxide superconductor; Thin film;
D O I
10.1143/JJAP.29.L936
中图分类号
O59 [应用物理学];
学科分类号
摘要
As-grown thin films of YBa2Cu3O7-y with a smooth surface were obtained on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (Tc) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa2Cu3O7-y films on NdGaO3 substrates were high-quality single crystals. NdGaO3 substrates are thought to be a promising substrate for epitaxial growth of YBa2Cu3O7-y high Tc thin films. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:L936 / L939
页数:4
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