DEPENDENCE OF PLASMA-INDUCED OXIDE CHARGING CURRENT ON AL ANTENNA GEOMETRY

被引：37

作者：

SHIN, H ^{[1
]}

HU, CM ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 12期

关键词：

D O I：

10.1109/55.192857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of the plasma-induced oxide charging current on Al electrode geometry has been studied. The stress current is collected only through the electrode surfaces not covered by the photoresist during plasma processes, and therefore is proportional to the edge length of the electrode during etching and proportional to the electrode area during photoresist ashing. Knowing the measured oxide charging currents, one should be able to predict the impact of these processes on oxide integrity and interface stability for a given antenna geometry more accurately.

引用

页码：600 / 602

页数：3

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