FORMATION OF STEP STRUCTURES BY AS DEPOSITION ON A DOUBLE-DOMAIN SI(001) SUBSTRATE

被引:17
作者
IDE, T [1 ]
机构
[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 03期
关键词
D O I
10.1103/PhysRevB.51.1722
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the rich variation in the evolution of step structures of vicinal Si(001) upon As deposition, studied by scanning tunneling microscopy. Clean 1°vicinal Si(001) exhibits a typical double-domain surface that consists of single-monolayer-height steps called SA and SB. On the other hand, As-deposited surfaces show drastic changes in the step structures depending on the substrate temperature during the deposition and the As coverage: At relatively low temperatures (500°C), the surface becomes nearly a single domain by the deposition of a half monolayer and two-dimensional islands appear after more As is deposited. At medium temperatures (600°C), however, one-monolayer As deposition makes the surface nearly a single domain, consisting of double-monolayer-height steps called DB. At high temperatures (700°C), a double-domain surface is formed containing triple-monolayer-height steps where the dimer rows in the upper terrace are perpendicular to the step edge. These various surface step structures are explained by kinetic effects of atomic movement during deposition and desorption and by the energetically stable shapes of Si(100)-As in equilibrium. © 1995 The American Physical Society.
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页码:1722 / 1728
页数:7
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