BIATOMIC STEPS ON (001) SILICON SURFACES

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J]. SURFACE SCIENCE, 1978, 74 (01) : 21 - 33

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[3] CASTELLAN GW, 1971, PHYSICAL CHEM

[4] SURFACE INFRARED STUDY OF SI(100)-(2X1)H [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 282 - 285

[5] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[6] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[7] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225

[8] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396

[9] STRUCTURAL PHASE-DIAGRAMS FOR THE SURFACE OF A SOLID - A TOTAL-ENERGY, RENORMALIZATION-GROUP APPROACH [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (20) : 1872 - 1875

[10] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J]. SURFACE SCIENCE, 1980, 93 (01) : 145 - 158

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J]. SURFACE SCIENCE, 1978, 74 (01) : 21 - 33

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[3] CASTELLAN GW, 1971, PHYSICAL CHEM

[4] SURFACE INFRARED STUDY OF SI(100)-(2X1)H [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 282 - 285

[5] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47

[6] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[7] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225

[8] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396

[9] STRUCTURAL PHASE-DIAGRAMS FOR THE SURFACE OF A SOLID - A TOTAL-ENERGY, RENORMALIZATION-GROUP APPROACH [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (20) : 1872 - 1875

[10] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J]. SURFACE SCIENCE, 1980, 93 (01) : 145 - 158