IONIC AND ELECTRONIC CONDUCTIVITIES OF HOMOGENEOUS AND HETEROGENEOUS MATERIALS IN THE SYSTEM ZRO2-IN2O3

被引:35
作者
GAUCKLER, LJ
SASAKI, K
机构
[1] Swiss Federal Institute of Technology (ETH-Zürich), CH-8092 Zurich, Nichtmetallische Werkstoffe
关键词
HOMOGENEOUS AND HETEROGENEOUS MATERIALS; IONIC CONDUCTIVITY-ZIRCONIUM OXIDE; ELECTRONIC CONDUCTIVITY-INDIUM OXIDE;
D O I
10.1016/0167-2738(94)00145-I
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the system ZrO2-In2O3, the In2O3-doped ZrO2 phases (cubic, tetragonal and t') exhibit high ionic conductivity and the ZrO2-doped In2O3 high electronic conductivity. These phases are in thermodynamic equilibrium at high temperatures. The ionic conductivity of ZrO2 depends on the crystal symmetry having the same In2O3 concentration. At 1000 degrees C, the highest conductivities were obtained for cubic ZrO2 doped with 25 mol% InO1.5. At lower concentrations, the ionic conductivity of cubic-ZrO2 decreases due to a first-order phase transformation to the tetragonal (t') form. Single-phase In2O3 doped with ZrO2 is an n-type electronic conductor with a conductivity of up to 7 X 10(4) S/m in air. Point defect models for electronic conduction in In2O3 doped with ZrO2 are discussed. Two maxima in the electronic conductivity have been found: one in the two-phase region and one in the InO1.5 single phase region. In the heterogeneous two-phase material cubic-ZrO2 + InO1.5, the electronic conductivity increases abruptly up to 10(4) S/m with increasing InO1.5 concentration. This material is a three-dimensional composite of ion- and electron-conducting phases. The origin of the maximum in electrical conductivity in the heterogeneous two-phase region is discussed.
引用
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页码:203 / 210
页数:8
相关论文
共 19 条
[2]   LOW-TEMPERATURE IONIC-CONDUCTIVITY OF 9.4-MOL-PERCENT-YTTRIA-STABILIZED ZIRCONIA SINGLE-CRYSTALS - COMMENT [J].
BADWAL, SPS .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (12) :3718-3719
[3]  
BATES JL, 1986, AM CERAM SOC BULL, V65, P673
[4]  
BAUMARD JF, 1988, ADV CERAM, V24, P779
[5]   ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].
FRANK, G ;
KOSTLIN, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206
[6]  
GAUCKLER LJ, 1993, SCI TECHNOLOGY ZIRCO, V5, P555
[7]   EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].
HAMBERG, I ;
GRANQVIST, CG .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159
[8]  
Heuer A.H., 1988, ADV CERAM, V24, P3
[9]   IONIC-CONDUCTIVITY OF ZR1-XIN2XO2-X [J].
HOHNKE, DK .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (07) :777-784
[10]  
KANAI Y, 1984, JPN J APPL PHYS 1, V23, P127, DOI 10.1143/JJAP.23.127