INCREASED MICROHARDNESS AND POSITRON-ANNIHILATION IN AL EXPOSED TO A HIGH-POWER ION-BEAM

被引：43

作者：

POGREBNJAK, AD

RUZIMOV, SM

机构：

来源：

PHYSICS LETTERS A | 1987年 / 120卷 / 05期

关键词：

D O I：

10.1016/0375-9601(87)90221-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：259 / 261

页数：3

共 10 条

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[4]

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[6] ANNEALING STUDIES OF VOIDS IN NEUTRON-IRRADIATED ALUMINUM SINGLE-CRYSTALS BY POSITRON-ANNIHILATION [J].

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[7]

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[8] POSITRON AND POSITRONIUM STATES IN SEMICONDUCTORS IRRADIATED BY SUPERCURRENT BEAMS OF CHARGED-PARTICLES [J].

POGREBNYAK, AD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :191-198

[9] STUDY OF DEFECT ANNEALING BY SUPERCURRENT PROTON-BEAM IRRADIATION AND OF RADIATION DEFECT PROFILES IN GAAS BY THE POSITRON-ANNIHILATION METHOD [J].

POGREBNYAK, AD ;

LOPATIN, VS ;

ZIYAKAEV, RG ;

VOROBIEV, SA .

PHYSICS LETTERS A, 1983, 97 (08) :362-364

[10]

WAMPLER WR, 1978, J PHYS F, V8, P1

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