STUDY OF DEFECT ANNEALING BY SUPERCURRENT PROTON-BEAM IRRADIATION AND OF RADIATION DEFECT PROFILES IN GAAS BY THE POSITRON-ANNIHILATION METHOD

被引：14

作者：

POGREBNYAK, AD

LOPATIN, VS

ZIYAKAEV, RG

VOROBIEV, SA

机构：

来源：

关键词：

D O I：

10.1016/0375-9601(83)90664-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：362 / 364

页数：3

共 6 条

[1]

BRANDT W, 1975, PHYS LETT A, V50, P39

[2] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

[3]

LANG DV, 1977, RAD EFFECTS SEMICOND

[4] POSITRON PROFILES AND POSITRON-ANNIHILATION IN THIN-LAYERS [J].

POGREBNYAK, AD ;

KUZMINIKH, VA ;

AREFEV, KP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :145-151

[5]

POGREBNYAK AD, 1982, PHYS STAT SOL B, V112, P79

TRIFTSHAUSER, W ;

KOGEL, G .