FIELD-DEPENDENT RECOMBINATION IN A-SI-H

被引:5
作者
JAHN, K
FUHS, W
PIERZ, K
机构
关键词
D O I
10.1016/0022-3093(89)90146-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:307 / 309
页数:3
相关论文
共 10 条
[1]   KINETICS OF DISTANT-PAIR RECOMBINATION .1. AMORPHOUS-SILICON LUMINESCENCE AT LOW-TEMPERATURE [J].
DUNSTAN, DJ .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (06) :579-594
[2]  
ENGEMANN D, 1976, AIP C P, V31, P37
[3]  
FRITZSCHE H, IN PRESS
[4]  
FUHS W, 1988, AMORPHOUS SILICON RE
[5]   PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF A-SI-H AT LOW-TEMPERATURE [J].
HOHEISEL, M ;
CARIUS, R ;
FUHS, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 63 (03) :313-319
[6]   PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY OF A-SI-H AT HIGH ELECTRIC-FIELDS [J].
JAHN, K ;
CARIUS, R ;
FUHS, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :575-578
[7]   PHOTOLUMINESCENCE IN PURE AND DOPED AMORPHOUS SILICON [J].
NASHASHIBI, TS ;
AUSTIN, IG ;
SEARLE, TM .
PHILOSOPHICAL MAGAZINE, 1977, 35 (03) :831-835
[8]  
PAESLER MA, 1980, PHILOS MAG B, V41, P393, DOI 10.1080/13642818008245396
[9]   LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].
STREET, RA .
ADVANCES IN PHYSICS, 1981, 30 (05) :593-676
[10]   DISTRIBUTION OF RECOMBINATION LIFETIMES IN AMORPHOUS-SILICON [J].
STREET, RA ;
BIEGELSEN, DK .
SOLID STATE COMMUNICATIONS, 1982, 44 (04) :501-505