PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF A-SI-H AT LOW-TEMPERATURE

被引：54

作者：

HOHEISEL, M

CARIUS, R

FUHS, W

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 63卷 / 03期

关键词：

D O I：

10.1016/0022-3093(84)90098-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：313 / 319

页数：7

共 14 条

[1] LOW-ENERGY EXCITATION OF PHOTO-LUMINESCENCE IN A-SI-H - TEMPERATURE AND INTENSITY EFFECTS
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SEARLE, TM
AUSTIN, IG
GIBSON, RA
ALLISON, J
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (06) : 481 - 485
[2] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY
DERSCH, H
SCHWEITZER, L
STUKE, J
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4678 - 4684
[3] KINETICS OF DISTANT-PAIR RECOMBINATION .1. AMORPHOUS-SILICON LUMINESCENCE AT LOW-TEMPERATURE
DUNSTAN, DJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (06): : 579 - 594
[4] Fischer R., 1979, Amorphous semiconductors, P159
[5] THERMALIZATION AND RECOMBINATION OF EXCESS CARRIERS IN A-SI-H
FISCHER, R
REHM, W
STUKE, J
VOGETGROTE, U
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 687 - 692
[6] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON
FUHS, W
MILLEVILLE, M
STUKE, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 495 - 502
[7] HOHEISEL M, UNPUB
[8] PICOSECOND TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SILICON
JOHNSON, AM
AUSTON, DH
SMITH, PR
BEAN, JC
HARBISON, JP
ADAMS, AC
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6816 - 6819
[9] ELECTRO-LUMINESCENCE IN AMORPHOUS-SILICON P-I-N JUNCTIONS
NASHASHIBI, TS
AUSTIN, IG
SEARLE, TM
GIBSON, RA
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (06): : 553 - 571
[10] ORENSTEIN J, 1981, PHYS REV LETT, V43, P161

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