LOW-ENERGY EXCITATION OF PHOTO-LUMINESCENCE IN A-SI-H - TEMPERATURE AND INTENSITY EFFECTS

被引：18

作者：

BHAT, PK

SEARLE, TM

AUSTIN, IG

GIBSON, RA

ALLISON, J

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

[2] UNIV SHEFFIELD,DEPT ELECTR ENGN,SHEFFIELD S1 4DT,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 45卷 / 06期

关键词：

D O I：

10.1016/0038-1098(83)90157-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：481 / 485

页数：5

共 15 条

[1] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI
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LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 373 - 391
[2] THERMALIZATION GAP EXCITATION PHOTO-LUMINESCENCE AND OPTICAL-ABSORPTION IN AMORPHOUS SILICON-HYDROGEN ALLOYS
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FELDMAN, BJ
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TONG, FM
WONG, GK
[J]. SOLID STATE COMMUNICATIONS, 1981, 38 (05) : 357 - 363
[3] ON THE ROLE OF THE DANGLING BOND AS A RADIATIVE CENTER IN A-SI-H
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AUSTIN, IG
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[J]. SOLID STATE COMMUNICATIONS, 1982, 41 (03) : 263 - 267
[4] OPTICALLY DETECTED MAGNETIC-RESONANCE (ODMR) IN A-SI
DEPINNA, SP
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AUSTIN, IG
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 323 - 326
[5] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[6] TIME RESOLVED PHOTO-LUMINESCENCE NEAR THE BAND-GAP IN AMORPHOUS SILICON
KURITA, S
CZAJA, W
KINMOND, S
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (10) : 879 - 883
[7] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[8] DERIVATION OF THE LOW-ENERGY OPTICAL-ABSORPTION SPECTRA OF A-SI-H FROM PHOTOCONDUCTIVITY
MODDEL, G
ANDERSON, DA
PAUL, W
[J]. PHYSICAL REVIEW B, 1980, 22 (04): : 1918 - 1925
[9] NASHASHIBI TS, 1977, 7TH P INT C AM LIQ S, P392
[10] OPTICAL-ABSORPTION BY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
PANKOVE, JI
POLLAK, FH
SCHNABOLK, C
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 459 - 462

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