LOW-ENERGY EXCITATION OF PHOTO-LUMINESCENCE IN A-SI-H - TEMPERATURE AND INTENSITY EFFECTS

[11] FAST RADIATIONLESS RECOMBINATION IN AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (02): : 595 - 602

[12] EXCITATION WAVELENGTH DEPENDENCE OF LUMINESCENCE SPECTRA OF A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (10) : 717 - 720

[13] STREET RA, 1978, PHILOS MAG, V37, P35, DOI 10.1080/13642817808245304

[14] RECOMBINATION IN PLASMA-DEPOSITED AMORPHOUS SI-H - LUMINESCENCE DECAY [J]. PHYSICAL REVIEW B, 1979, 19 (06): : 3027 - 3040

[15] TIME-RESOLVED PHOTO-LUMINESCENCE IN A-SI-H - SUB-BAND-GAP EXCITATION [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5276 - 5284

[11] FAST RADIATIONLESS RECOMBINATION IN AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (02): : 595 - 602

[12] EXCITATION WAVELENGTH DEPENDENCE OF LUMINESCENCE SPECTRA OF A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (10) : 717 - 720

[13] STREET RA, 1978, PHILOS MAG, V37, P35, DOI 10.1080/13642817808245304

[14] RECOMBINATION IN PLASMA-DEPOSITED AMORPHOUS SI-H - LUMINESCENCE DECAY [J]. PHYSICAL REVIEW B, 1979, 19 (06): : 3027 - 3040

[15] TIME-RESOLVED PHOTO-LUMINESCENCE IN A-SI-H - SUB-BAND-GAP EXCITATION [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5276 - 5284