CHEMICALLY AMPLIFIED SOFT-X-RAY RESISTS - SENSITIVITY, RESOLUTION, AND MOLECULAR PHOTODESORPTION

被引：7

作者：

KUBIAK, GD ^{[1
]}

HWANG, RQ ^{[1
]}

SCHULBERG, MT ^{[1
]}

TICHENOR, DA ^{[1
]}

EARLY, K ^{[1
]}

机构：

[1] AT&T BELL LABS, HOLMDEL, NJ 07733 USA

来源：

APPLIED OPTICS | 1993年 / 32卷 / 34期

关键词：

D O I：

10.1364/AO.32.007036

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The sensitivity, ion photodesorption, and lithographic performance of selected novolac-based chemically amplified resists have been studied at an exposure wavelength of 140 angstrom. Flood exposures of the resits AZ PF514, AZ PN114, and SAL 601 yield D0.9 values of 2.5-3.5 mJ/cm2 for 0.25-mum-thick films. Contrast values range from 3 for AZ PN114 to 5 for SAL 601. Photodesorption of fragment ions induced by 140-angstrom radiation has been examined in AZ PN114 by using time-of-flight mass spectrometry and compared with poly(methylmethacrylate) (PMMA). Mass-integrated ion desorption yields from AZ PN114 are found to be approximately 90 times less per exposure than from PMMA. Soft-x-ray projection in AZ PF514 and SAL 601 has been characterized by use of a multilayer-coated 20 x Schwarzschild objective and a transmissive Ge/Si mask illuminated by a laser plasma source.

引用

页码：7036 / 7043

页数：8

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