EFFECTS OF CRYSTALLINITY ON THE LUMINESCENCE OF ZNS-TB,P POWDER AND FILM

被引:15
作者
KANEHISA, O [1 ]
SHIIKI, M [1 ]
SUZUKI, T [1 ]
UENAE, K [1 ]
机构
[1] HITACHI MAXELL LTD,KYOTO RES LAB,IBARAKI,OSAKA 569,JAPAN
关键词
ELECTROLUMINESCENCE; CATHADOLUMINESCENCE; D-A PAIR EMISSION; CRYSTALLINITY;
D O I
10.1016/0925-8388(94)01490-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
To investigate the possibility of applying donor (D)-acceptor (A) pair emission in ZnS crystals to electroluminescence (EL) devices, the luminescence properties of ZnS:Tb,P are examined. In the cathodoluminescence spectra of ZnS:Tb,P powder, f-f emission of Tb3+ ions and D-A pair emission related to Tb donors and P accepters are observed. It is found that D-A pair emission decreases more easily than f-f emission with degradation in crystallinity. In the cathodo- and electroluminescence of ZnS:Tb,P film, however, only f-f emissions, not D-A pair emissions, are observed. This is because of the lack of good crystallinity in the film. Based on these findings, it is proposed that not only less distortion but also a critical size are required for the observation of D-A pair emission in ZnS films.
引用
收藏
页码:154 / 159
页数:6
相关论文
共 11 条
[1]   TB3+ AS RECOMBINATION CENTER IN ZNS [J].
ANDERSON, WW .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (2A) :A556-&
[2]   COLOR ELECTROLUMINESCENT DEVICES PREPARED BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
HIRABAYASHI, K ;
KOZAWAGUCHI, H ;
TSUJIYAMA, B .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (09) :1472-1476
[3]   PROBE LAYER MEASUREMENTS OF ELECTRO-LUMINESCENCE EXCITATION IN AC THIN-FILM DEVICES [J].
MARRELLO, V ;
SAMUELSON, L ;
ONTON, A ;
REUTER, W .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3590-3599
[4]   EXCITATION PROCESS OF THE TB EMISSION CENTER IN A ZNS-TB,F THIN-FILM ELECTROLUMINESCENT DEVICE [J].
MIKAMI, A ;
OGURA, T ;
TANIGUCHI, K ;
YOSHIDA, M ;
NAKAJIMA, S .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3650-3657
[5]   TB-F EMISSION CENTERS IN ZNS-TB,F THIN-FILM ELECTROLUMINESCENT DEVICES [J].
MIKAMI, A ;
OGURA, T ;
TANAKA, K ;
TANIGUCHI, K ;
YOSHIDA, M ;
NAKAJIMA, S .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :3028-3034
[6]   CHEMICAL VAPOR-DEPOSITION OF ZNSTB ELECTROLUMINESCENT FILMS IN A BYPASS-HCL FLOW SYSTEM [J].
MIKAMI, A ;
TERADA, K ;
YOSHIDA, M ;
NAKAJIMA, S .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :991-996
[7]   NEW EMISSION BAND IN SELF-ACTIVATED ZNS [J].
ODA, S ;
KUKIMOTO, H .
JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) :829-832
[8]   EXCITATION MECHANISM IN THIN-FILM ELECTROLUMINESCENT DEVICES [J].
OKAMOTO, K ;
MIURA, S .
APPLIED PHYSICS LETTERS, 1986, 49 (23) :1596-1598
[9]   ELECTROLUMINESCENCE OF ZINC-SULFIDE THIN-FILMS ACTIVATED WITH DONORS AND ACCEPTORS [J].
SHIIKI, M ;
KANEHISA, O .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :1035-1039
[10]   OPTICAL-EXCITATION AND RECOMBINATION MECHANISMS OF TB-3+-DOPED ZINC-SULFIDE THIN-FILMS [J].
SWIATEK, K ;
SUCHOCKI, A ;
STAPOR, A ;
NIINISTO, L ;
LESKELA, M .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :6048-6051