PROBE LAYER MEASUREMENTS OF ELECTRO-LUMINESCENCE EXCITATION IN AC THIN-FILM DEVICES

被引：35

作者：

MARRELLO, V ^{[1
]}

SAMUELSON, L ^{[1
]}

ONTON, A ^{[1
]}

REUTER, W ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3590 / 3599

页数：10

相关论文

共 24 条

[1] TB3+ AS RECOMBINATION CENTER IN ZNS
ANDERSON, WW
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (2A): : A556 - &
[2] AC ELECTROLUMINESCENCE OF ZNS-LNF3 AND ZNS-MN THIN-FILMS - EXCITATION MECHANISMS AND MEMORY EFFECTS
BENOIT, J
BENALLOUL, P
PARROT, R
MATTLER, J
[J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 739 - 742
[3] TIME RESOLVED SPECTROSCOPY OF ZNS=MN BY DYE-LASER TECHNIQUE
BUSSE, W
GUMLICH, HE
MEISSNER, B
THEIS, D
[J]. JOURNAL OF LUMINESCENCE, 1976, 12 (01) : 693 - 700
[4] CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878
[5] SYSTEM FOR COMBINED SIMS-AES-XPS STUDIES OF SOLIDS
FRISCH, MA
REUTER, W
WITTMAACK, K
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (06) : 695 - 704
[6] GEISS RH, UNPUBLISHED
[7] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211
[8] PHYSICAL AND ELECTRICAL CHARACTERIZATION OF CO-DEPOSITED ZNS-MN ELECTROLUMINESCENT THIN-FILM STRUCTURES
HURD, JM
KING, CN
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (06) : 879 - 891
[9] EXCITATION MECHANISM OF ELECTROLUMINESCENT ZNS THIN-FILMS DOPED WITH RARE-EARTH IONS
KOBAYASHI, H
TANAKA, S
SASAKURA, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) : 1110 - 1114
[10] EXCITATION MECHANISM OF ELECTROLUMINESCENT ZNS-ER-3+ THIN-FILMS
KOBAYASHI, H
TANAKA, S
SASAKURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1637 - 1638