PHOTOELECTRON-SPECTROSCOPY STUDIES OF THE FORMATION OF THE AU-SI(100) INTERFACE USING SYNCHROTRON RADIATION

被引:32
作者
HRICOVINI, K
BONNET, JE
CARRIERE, B
DEVILLE, JP
HANBUCKEN, M
LELAY, G
机构
关键词
D O I
10.1016/0039-6028(89)90822-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:630 / 636
页数:7
相关论文
共 18 条
  • [1] PHOTOEMISSION INVESTIGATION OF THE TEMPERATURE EFFECT ON SI-AU INTERFACES
    ABBATI, I
    BRAICOVICH, L
    FRANCIOSI, A
    LINDAU, I
    SKEATH, PR
    SU, CY
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 930 - 935
  • [2] ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES
    BISI, O
    CALANDRA, C
    BRAICOVICH, L
    ABBATI, I
    ROSSI, G
    LINDAU, I
    SPICER, WE
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22): : 4707 - 4716
  • [3] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
    BRAICOVICH, L
    GARNER, CM
    SKEATH, PR
    SU, CY
    CHYE, PW
    LINDAU, I
    SPICER, WE
    [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5131 - 5141
  • [4] PHOTOEMISSION-STUDIES OF ATOMIC REDISTRIBUTION AT GOLD-SILICON AND ALUMINUM-SILICON INTERFACES
    BRILLSON, LJ
    KATNANI, AD
    KELLY, M
    MARGARITONDO, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 551 - 555
  • [5] CAO R, 1985, J VACUUM SCI TECHN A, V4, P846
  • [6] CARRIERE B, 1979, SURF SCI, V82, P2929
  • [7] CARRIERE B, 1988, SPRINGER SERIES SURF, V11, P368
  • [8] AU-SI INTERFACE FORMATION - THE OTHER SIDE OF THE PROBLEM
    FRANCIOSI, A
    NILES, DW
    MARGARITONDO, G
    QUARESIMA, C
    CAPOZI, M
    PERFETTI, P
    [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6917 - 6919
  • [9] MODULATION OF ATOMIC INTERDIFFUSION AT THE SI(111)-AU INTERFACE
    FRANCIOSI, A
    ONEILL, DG
    WEAVER, JH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 524 - 529
  • [10] FORMATION OF NOBLE-METAL SI(100) INTERFACES
    HANBUCKEN, M
    LELAY, G
    [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 122 - 132