ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES

被引：30

作者：

BISI, O

CALANDRA, C

BRAICOVICH, L

ABBATI, I

ROSSI, G

LINDAU, I

SPICER, WE

机构：

[1] POLITECN MILAN,IST FIS,I-20133 MILAN,ITALY

[2] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 22期

关键词：

D O I：

10.1088/0022-3719/15/22/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4707 / 4716

页数：10

共 16 条

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[3] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494
[4] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
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[5] CROS A, 1980, VIDE COUCHES MINCE S, V201, P951
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[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1981, 21 (04) : 285 - 363
[7] FORMATION, STRUCTURE, AND ORIENTATION OF GOLD SILICIDE ON GOLD SURFACES
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[8] CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI
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WILLIAMS, AR
[J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4784 - 4790
[9] PHOTOELECTRON BRANCHING RATIO IN THE 5D-SUBSHELL OF PT, AU AND PB MEASURED WITH SYNCHROTRON RADIATION
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KALLNE, E
[J]. SOLID STATE COMMUNICATIONS, 1980, 34 (02) : 83 - 86
[10] INVESTIGATION OF SOLID-SOLID REACTIONS OF AU FILMS ON SILICON
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 313 - 322

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