DEPOSITION OF SILICON-GERMANIUM ALLOYS UNDER PLASMA MODULATION CONDITIONS

被引：4

作者：

BRUNO, G ^{[1
]}

CAPEZZUTO, P ^{[1
]}

LOSURDO, M ^{[1
]}

MANODORO, P ^{[1
]}

CICALA, G ^{[1
]}

机构：

[1] CNR,DIPARTMENTO OPHTHALMOL,I-70126 BARI,ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80230-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Plasma deposition of a-Si,Ge:H,F films from SiF4-GeH4-H2 mixture, has been investigated by applying a square wave modulation to the r.f. field. The effects of plasma modulation on the thickness and compositional uniformity and on the increase of Ge and H incorporation in the film are reported. A two-phases model for the conduction mechanism is preliminarily discussed.

引用

页码：753 / 756

页数：4