LOW-THRESHOLD OPERATION OF HEMISPHERICAL MICROCAVITY SINGLE-QUANTUM-WELL LASERS AT 4-K

被引：31

作者：

MATINAGA, FM

KARLSSON, A

MACHIDA, S

YAMAMOTO, Y

SUZUKI, T

KADOTA, Y

KEDA, M

机构：

[1] ROYAL INST TECHNOL, DEPT MICROWAVE ENGN, S-10044 STOCKHOLM 70, SWEDEN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 243, JAPAN

[3] CPQD TELEBRAS, BR-13085 CAMPINAS, SP, BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.108928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single-quantum-well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor beta is about 0.01.

引用

页码：443 / 445

页数：3