FURNACE N2O OXIDATION PROCESS FOR SUBMICRON MOSFET DEVICE APPLICATIONS

被引：6

作者：

HWANG, H ^{[1
]}

HAO, MY ^{[1
]}

LEE, J ^{[1
]}

MATHEWS, V ^{[1
]}

FAZAN, PC ^{[1
]}

DENNISON, C ^{[1
]}

机构：

[1] MICRON TECHNOL INC, BOISE, ID 83706 USA

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 05期

关键词：

D O I：

10.1016/0038-1101(93)90245-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mobility and reliability characteristics of submicron nMOSFETs with oxynitride gate dielectric of various oxide thicknesses (50, 80 and 120 angstrom), and oxidation temperatures (907, 957 and 1057-degrees-C) grown in a conventional furnace have been investigated. Oxynitride gate devices show higher mobility than that of control oxide devices under high normal field. The oxynitride devices exhibit much less degradation (DELTAG(m)/G(m) and DELTAV(t)) under channel hot-electron stress. Based on lifetime extrapolation, non-LDD MOSFETs using this new oxynitride dielectrics are predicted to have lifetime substantially longer than 10 years under 3.3 V operation.

引用

页码：749 / 751

页数：3

共 6 条

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