SHORT-TERM AND LONG-TERM RELIABILITY OF NITRIDED OXIDE MISFETS

被引:38
作者
KAGA, T [1 ]
HAGIWARA, T [1 ]
机构
[1] HITACHI LTD,MUSASHI WORKS,KOKUBUNJI,TOKYO 185,JAPAN
关键词
D O I
10.1109/16.3347
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
4
引用
收藏
页码:929 / 934
页数:6
相关论文
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[2]  
Hokari Y., 1982, International Electron Devices Meeting. Technical Digest, P46
[3]  
Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190
[4]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
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