SPACE-CHARGE-LIMITED PHOTOCURRENT TRANSIENTS - THE INFLUENCE OF BIMOLECULAR RECOMBINATION

被引：46

作者：

JUSKA, G ^{[1
]}

VILIUNAS, M ^{[1
]}

ARLAUSKAS, K ^{[1
]}

KOCKA, J ^{[1
]}

机构：

[1] ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE 6,CZECH REPUBLIC

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.51.16668

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently we presented a detailed theory of the space-charge-limited current (SCLC) transients generated by an instantaneous pulse of light, in which the realistic absorption profile has been taken into account. In this paper we present a theory that, in addition, takes into account the bimolecular recombination and the value of the detection resistor. This allowed us to propose a convenient method to study the fast recombination by electrical instead of the usual optical techniques. The method allowed us to present experimental results related to subnanosecond nonradiative bimolecular recombination in amorphous hydrogenated silicon (a-Si:H) and to discuss the microscopic origin of bimolecular recombination. The importance of understanding bimolecular recombination in a-Si:H is underscored by the fact that bimolecular recombination is the driving force of a-Si:H degradation. © 1995 The American Physical Society.

引用

页码：16668 / 16676

页数：9

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