CAPACITY MEASUREMENT OF INTERFACE OF GA1-XALXAS AND GAAS1-XPX ELECTRODES

被引：11

作者：

HALOUANI, FE

TRAORE, H

ALLAIS, G

DESCHANVRES, A

机构：

来源：

SURFACE SCIENCE | 1979年 / 79卷 / 02期

关键词：

D O I：

10.1016/0039-6028(79)90303-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：498 / 508

页数：11

共 19 条

[1] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &
[2] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
CRAFORD, MG
STILLMAN, GE
ROSSI, JA
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
[3] INVESTIGATION ON FREQUENCY-DEPENDENCE OF IMPEDANCE OF NEARLY IDEALLY POLARIZABLE SEMICONDUCTOR ELECTRODES CDSE, CDS AND TIO2
DUTOIT, EC
VANMEIRHAEGHE, RL
CARDON, F
GOMES, WP
[J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1975, 79 (12): : 1206 - 1213
[4] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[5] UBER DEN MECHANISMUS DER ANODISCHEN AUFLOSUNG VON GALLIUMARSENID
GERISCHER, H
[J]. BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1965, 69 (07): : 578 - +
[6] GLERIA M, 1975, J ELECTROANAL CHEM, V65, P163, DOI 10.1016/S0022-0728(75)80064-7
[7] GOMES WP, 1973, Z PHYS CHEM NEUE FOL, V86, P330
[8] GALLIUM ARSENIDE ELECTRODE BEHAVIOR
HARVEY, WW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) : 472 - &
[9] FREQUENCY-DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODES
LAFLERE, WH
VANMEIRHAEGHE, RL
CARDON, F
GOMES, WP
[J]. SURFACE SCIENCE, 1976, 59 (02) : 401 - 412
[10] DIFFERENTIAL CAPACITANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODE
LAFLERE, WH
CARDON, F
GOMES, WP
[J]. SURFACE SCIENCE, 1974, 44 (02) : 541 - 552

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