METAL SEMICONDUCTIVE POLYMER SCHOTTKY DEVICE

被引：145

作者：

GUPTA, R

MISRA, SCK

MALHOTRA, BD

BELADAKERE, NN

CHANDRA, S

机构：

[1] National Physical Laboratory, New Delhi 110012, Dr. K. S. Krishnan Marg

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.104441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Development of a metal/organic-semiconductor Schottky junction as an alternative to the metal/inorganic-semiconductor junction is reported. Metal/polypyrrole (PP) junctions have been prepared with electrochemically deposited doped PP films of different thickness and various metals (In, Sn, Ti, and Al) as electrodes. The electrical characteristics of the junction depend upon the work functions of PP and the metal. It has been possible to prepare Schottky barriers on the PP films with a metal electrode having a work function lower than that of the polymer. Various physical characteristics of the polymer, work function, Fermi level, and carrier concentration have been estimated.

引用

页码：51 / 52

页数：2

共 13 条

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