METAL SEMICONDUCTIVE POLYMER SCHOTTKY DEVICE

被引:145
作者
GUPTA, R
MISRA, SCK
MALHOTRA, BD
BELADAKERE, NN
CHANDRA, S
机构
[1] National Physical Laboratory, New Delhi 110012, Dr. K. S. Krishnan Marg
关键词
D O I
10.1063/1.104441
中图分类号
O59 [应用物理学];
学科分类号
摘要
Development of a metal/organic-semiconductor Schottky junction as an alternative to the metal/inorganic-semiconductor junction is reported. Metal/polypyrrole (PP) junctions have been prepared with electrochemically deposited doped PP films of different thickness and various metals (In, Sn, Ti, and Al) as electrodes. The electrical characteristics of the junction depend upon the work functions of PP and the metal. It has been possible to prepare Schottky barriers on the PP films with a metal electrode having a work function lower than that of the polymer. Various physical characteristics of the polymer, work function, Fermi level, and carrier concentration have been estimated.
引用
收藏
页码:51 / 52
页数:2
相关论文
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