ENERGY-BALANCE MODEL FOR GUNN DOMAINS

被引：2

作者：

CHEUNG, PS

HEARN, CJ

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 03期

关键词：

D O I：

10.1049/el:19720056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：79 / +

页数：1

共 8 条

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OGG, NR .

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SWAIN, S .

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[4]

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[5] EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J].

HASTY, TE ;

STRATTON, R ;

JONES, EL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4623-+

[6] SOME MEASUREMENGS OF STEADY-STATE AND TRANSIENT CHARACTERISTICS OF HIGH-FIELD DIPOLE DOMAINS IN GAAS [J].

KURU, I ;

ROBSON, PN ;

KINO, GS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (01) :21-+

[7] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[8]

SZEKELY V, 1968, ELECTRON LETT, V4, P592, DOI 10.1049/el:19680462

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