FINITE-ELEMENT MODELING AND CHARACTERIZATION OF A SILICON CONDENSER MICROPHONE WITH A HIGHLY PERFORATED BACKPLATE

被引:46
作者
BERGQVIST, J
机构
[1] Centre Suisse d'Electronique et de Microtechnique S.A. (CSEM)
关键词
D O I
10.1016/0924-4247(93)80219-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new method to simulate the sensitivity and frequency response of capacitive microphones has been developed. Finite-element analysis is used in combination with equivalent circuits to evaluate mechanical, electrostatic and acoustic effects. The simulation method has been applied to a condenser microphone in monocrystalline silicon. The design has a thin and highly perforated backplate in combination with a small air gap of 2 mum. Sensitivities in the range 1-5 mV/Pa have been recorded with a bias voltage between 5 and 13 V. The device has a first resonance at 27 kHz. The measured results are in good agreement with the results obtained with the new simulation method.
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页码:191 / 200
页数:10
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