SILICON-DIOXIDE ELECTRET TRANSDUCER

[1] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[2] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[3] ANODIC OXIDE ELECTRETS [J]. ELECTRONICS LETTERS, 1969, 5 (19) : 462 - &

[4] Feigl F. J., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P104

[5] Griese H., 1977, FUNKSCHAU, V49, P1251

[6] HOHM D, 1983, REV ACOUST, V6, P29

[7] A BATCH-FABRICATED SILICON CAPACITIVE PRESSURE TRANSDUCER WITH LOW-TEMPERATURE SENSITIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 42 - 48

[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[10] SILICON AS A MECHANICAL MATERIAL [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (05) : 420 - 457

[1] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185

[2] ANISOTROPIC ETCHING OF SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193

[3] ANODIC OXIDE ELECTRETS [J]. ELECTRONICS LETTERS, 1969, 5 (19) : 462 - &

[4] Feigl F. J., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P104

[5] Griese H., 1977, FUNKSCHAU, V49, P1251

[6] HOHM D, 1983, REV ACOUST, V6, P29

[7] A BATCH-FABRICATED SILICON CAPACITIVE PRESSURE TRANSDUCER WITH LOW-TEMPERATURE SENSITIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 42 - 48

[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[10] SILICON AS A MECHANICAL MATERIAL [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (05) : 420 - 457