CHARACTERIZATION OF CUGA0.25IN0.75SE2 THIN-FILMS

被引：4

作者：

APARNA, Y

REDDY, PS

NAIDU, BS

REDDY, PJ

机构：

[1] Department of Physics, Sri Venkateswara University, Tirupati

来源：

MATERIALS LETTERS | 1991年 / 11卷 / 8-9期

关键词：

D O I：

10.1016/0167-577X(91)90200-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuGa0.25In0.75Se2 thin films prepared by the flash evaporation technique onto Corning 7059 glass substrates at T(s) = 598-648 K were single phase, nearly stoichiometric and polycrystalline with a strong (112) preferred orientation. The electrical resistivity of the films was in the range 30-350-OMEGA cm. Thermoelectric power and Hall effect measurements indicated p-type conduction in the films. Optical absorption studies indicated a direct fundamental bandgap of 1.16 eV.

引用

页码：273 / 276

页数：4

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