CHARACTERIZATION OF CUGA0.25IN0.75SE2 THIN-FILMS

被引：4

作者：

APARNA, Y

REDDY, PS

NAIDU, BS

REDDY, PJ

机构：

[1] Department of Physics, Sri Venkateswara University, Tirupati

来源：

MATERIALS LETTERS | 1991年 / 11卷 / 8-9期

关键词：

D O I：

10.1016/0167-577X(91)90200-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuGa0.25In0.75Se2 thin films prepared by the flash evaporation technique onto Corning 7059 glass substrates at T(s) = 598-648 K were single phase, nearly stoichiometric and polycrystalline with a strong (112) preferred orientation. The electrical resistivity of the films was in the range 30-350-OMEGA cm. Thermoelectric power and Hall effect measurements indicated p-type conduction in the films. Optical absorption studies indicated a direct fundamental bandgap of 1.16 eV.

引用

页码：273 / 276

页数：4

共 15 条

[11]

KLENK R, 1988, 20TH P PHOT SPEC C L, P1443

[12] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1956, 104 (06) :1508-1516

[13]

Schock H. W., 1987, Seventh E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR-10939-EN), P465

[14] ELECTRO-OPTICAL PROPERTIES OF CUGA0.7IN0.3SE2/ZNSE HETEROJUNCTION [J].

SEURET, D ;

VIGIL, O ;

LECCABUE, F .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 72 (02) :661-666

[15]

Van de Pauw L.J., 1958, PHILIPS RES REP, V13, P1

← 1 2 →