TRANSIENT PHOTODEPOPULATION MEASUREMENTS OF ELECTRON TRAP DISTRIBUTIONS IN THIN SIO2 FILMS ON SILICON

被引：19

作者：

THOMAS, JH

机构：

[1] BELL TEL LABS,COLUMBUS,OH 43215

[2] LEHIGH UNIV,MAT RES CTR,BETHLEHEM,PA 18015

[3] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015

来源：

关键词：

D O I：

10.1063/1.1662264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：811 / 814

页数：4

共 7 条

[1] DISTEFANO TH, 1971, B AM PHYS SOC, V16, P373
[2] GOODMAN AM, 1965, PHYS REV, V152, P785
[3] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2
POWELL, RJ
DERBENWICK, GF
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 99 - +
[4] SPECTRALLY RESOLVED PHOTO DEPOPULATION OF ELECTRON TRAPPING DEFFECTS IN AMORPHOUS SILICA FILMS
THOMAS, JH
FEIGL, FJ
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (21) : 1669 - &
[5] THOMAS JH, 1970, THESIS LEHIGH U
[6] THOMAS JO, TO BE PUBLISHED
[7] WILLIAMS R, 1965, PHYS REV A, V140, P569