VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2

被引：171

作者：

POWELL, RJ

DERBENWICK, GF

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期

关键词：

D O I：

10.1109/TNS.1971.4326419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：99 / +

页数：1

共 13 条

[1] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J].

BERGLUND, CN ;

POWELL, RJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :573-+

[2]

DERBENWICK GF, TO BE PUBLISHED

[3] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J].

MITCHELL, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :764-+

[4]

NICOLLIAN EH, TO BE PUBLISHED

[5] FABRICATION OF PLANAR SILICON TRANSISTORS WITHOUT PHOTORESIST [J].

OKEEFFE, TW ;

HANDY, RM .

SOLID-STATE ELECTRONICS, 1968, 11 (02) :261-&

[6] ULTRAVIOLET-ENHANCED OXIDATION OF SILICON [J].

OREN, R ;

GHANDHI, SK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :752-&

[7] OPTICAL TRANSITIONS IN CRYSTALLINE AND FUSED QUARTZ [J].

PHILIPP, HR .

SOLID STATE COMMUNICATIONS, 1966, 4 (01) :73-&

[8] INTERFACE BARRIER ENERGY DETERMINATION FROM VOLTAGE DEPENDENCE OF PHOTOINJECTED CURRENTS [J].

POWELL, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2424-+

[9] USE OF PHOTOINJECTION TO DETERMINE OXIDE CHARGE DISTRIBUTIONS AND INTERFACE PROPERTIES IN MOS STRUCTURES [J].

POWELL, RJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :41-&

[10] PHOTOINJECTION INTO SIO2 - USE OF OPTICAL INTERFERENCE TO DETERMINE ELECTRON AND HOLE CONTRIBUTIONS [J].

POWELL, RJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) :5093-&

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