USE OF PHOTOINJECTION TO DETERMINE OXIDE CHARGE DISTRIBUTIONS AND INTERFACE PROPERTIES IN MOS STRUCTURES

被引：17

作者：

POWELL, RJ

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 06期

关键词：

D O I：

10.1109/TNS.1970.4325765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：41 / &

相关论文

共 6 条

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BERGLUND CN, TO BE PUBLISHED

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[6] PHOTOINJECTION INTO SIO2 - USE OF OPTICAL INTERFERENCE TO DETERMINE ELECTRON AND HOLE CONTRIBUTIONS [J].

POWELL, RJ .

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