HIGH-RATE REACTIVE ION ETCHING OF SIO2 USING A MAGNETRON DISCHARGE

被引:41
作者
HORIIKE, Y
OKANO, H
YAMAZAKI, T
HORIE, H
机构
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D O I
10.1143/JJAP.20.L817
中图分类号
O59 [应用物理学];
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页码:L817 / L820
页数:4
相关论文
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OKANO H, 1981, P S PLASMA ETCHING D, V18, P199
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