A GAS-PHASE CHEMICAL ETCHANT FOR BORON-NITRIDE FILMS

被引：28

作者：

HARRIS, SJ

DOLL, GL

CHANCE, DC

WEINER, AM

机构：

[1] GM CORP,CTR RES & DEV,DEPT PHYS,WARREN,MI 48090

[2] WAYNE STATE UNIV,DEPT PHYS,DETROIT,MI 48201

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.115137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated that boron nitride films deposited on silicon and tantalum can be etched in a hot filament environment with an input gas composition of 1% methane in hydrogen. Etching experiments were carried out at around 800 K on a tantalum foil and at somewhat higher temperatures on silicon substrates. If the etchant is atomic hydrogen or methyl radical, then we estimate etching efficiencies (atoms etched per collision) of similar to 10(-5) or 10(-4) for these species, respectively. (C) 1995 American Institute of Physics.

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页码：2314 / 2316

页数：3

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