REACTION-KINETICS ON DIAMOND - MEASUREMENT OF H-ATOM DESTRUCTION RATES

被引:71
作者
HARRIS, SJ
WEINER, AM
机构
[1] Physical Chemistry Department, General Motors Research Labs, Warren, MI 48090-9055, 30500 Mound Road
关键词
D O I
10.1063/1.354948
中图分类号
O59 [应用物理学];
学科分类号
摘要
There is presently a considerable effort to understand the chemistry of diamond film growth by chemical-vapor deposition. The first measurements of reaction kinetics between diamond and a gas-phase species-H atoms-involved in its formation are described. A remarkably simple method to measure H atom concentrations is developed and the method is used to measure gamma(d), the destruction probability of H atoms on diamond at 20 Torr and 1200 K. It is found that gamma(d)=0.12, with an estimated uncertainty of a factor of 2. This value is about half that estimated from gas-phase alkane rate constants and very close to that predicted by molecular-dynamics/Monte Carlo calculations. The agreement to within the estimated uncertainty supports the assumption that gas-phase alkane rate constants are essentially transferable to reactions between a diamond surface and gas-phase species. The H atom measurement technique could be useful for studying growth in other chemical-vapor-deposition systems in which hydrogen is in high concentration.
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页码:1022 / 1026
页数:5
相关论文
共 35 条
[1]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[2]   A MECHANISM FOR GROWTH ON DIAMOND (110) FROM ACETYLENE [J].
BELTON, DN ;
HARRIS, SJ .
JOURNAL OF CHEMICAL PHYSICS, 1992, 96 (03) :2371-2377
[3]   EMPIRICAL POTENTIAL FOR HYDROCARBONS FOR USE IN SIMULATING THE CHEMICAL VAPOR-DEPOSITION OF DIAMOND FILMS [J].
BRENNER, DW .
PHYSICAL REVIEW B, 1990, 42 (15) :9458-9471
[4]  
BRENNER DW, COMMUNICATION
[5]  
BRENNER DW, UNPUB
[6]   HYDROGEN-ATOM DETECTION IN THE FILAMENT-ASSISTED DIAMOND DEPOSITION ENVIRONMENT [J].
CELII, FG ;
BUTLER, JE .
APPLIED PHYSICS LETTERS, 1989, 54 (11) :1031-1033
[7]   DIAMOND CHEMICAL VAPOR-DEPOSITION [J].
CELII, FG ;
BUTLER, JE .
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1991, 42 (01) :643-684
[8]   HOT FILAMENT ENHANCED CHEMICAL VAPOR-DEPOSITION OF ALN THIN-FILMS [J].
DUPUIE, JL ;
GULARI, E .
APPLIED PHYSICS LETTERS, 1991, 59 (05) :549-551
[9]   DETAILED SURFACE AND GAS-PHASE CHEMICAL-KINETICS OF DIAMOND DEPOSITION [J].
FRENKLACH, M ;
WANG, H .
PHYSICAL REVIEW B, 1991, 43 (02) :1520-1545
[10]   GROWTH-MECHANISM OF VAPOR-DEPOSITED DIAMOND [J].
FRENKLACH, M ;
SPEAR, KE .
JOURNAL OF MATERIALS RESEARCH, 1988, 3 (01) :133-140