CHARGE CARRIER RELAXATION IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC INVESTIGATION OF THE PICOSECOND DECAY OF PHOTOINDUCED ABSORPTION

被引：2

作者：

GUSTAFSON, TL

COLLINS, RW

ROBERTS, DM

SCHER, H

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90028-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：121 / 124

页数：4

共 10 条

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[3]

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[7] PICOSECOND TO MICROSECOND DECAY OF PHOTOINDUCED ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON [J].

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[9]

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[10] PICOSECOND PHOTOINDUCED TRANSMISSION ASSOCIATED WITH DEEP TRAPS IN PHOSPHORUS-DOPED A-SI-H [J].

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