ANALYSIS OF INJECTION-LOCKED GAIN-GUIDED DIODE-LASER ARRAYS

被引：24

作者：

VERDIELL, JM

FREY, R

HUIGNARD, JP

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

[2] ECOLE POLYTECH,CNRS,OPT QUANT LAB,F-91128 PALAISEAU,FRANCE

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 03期

关键词：

D O I：

10.1109/3.81337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new analytical model of injection-locked gain guided laser arrays. Diffraction-limited and single-lobe operation of injection-locked arrays is attributed to coherent summation of several transverse modes that are phase locked by injection. Our model predicts far- and near-field patterns, locking bandwidth, beam-steering properties, and locked output power. The effects of varying the master power, beam shape, position, and incidence angle on the slave array facet are also studied. Theoretical and experimental results are compared.

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收藏

页码：396 / 401

页数：6

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