EFFECT OF LI-B ION PAIRING ON LI+ ION DRIFT IN SI

被引：52

作者：

PELL, EM

机构：

来源：

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D O I：

10.1063/1.1735914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1675 / 1679

页数：5

共 10 条

[1] ION PAIRING IN SILICON
MAITA, JP
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) : 68 - 70
[2] PAULING L, 1960, NATURE CHEMICAL BOND, P514
[3] DIFFUSION OF LI IN SI AT HIGH-T AND THE ISOTOPE EFFECT
PELL, EM
[J]. PHYSICAL REVIEW, 1960, 119 (03): : 1014 - 1021
[4] DIFFUSION RATE OF LI IN SI AT LOW TEMPERATURES
PELL, EM
[J]. PHYSICAL REVIEW, 1960, 119 (04): : 1222 - 1225
[5] ION DRIFT IN AN N-P JUNCTION
PELL, EM
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302
[6] REFINED THEORY OF ION PAIRING .2. IRREVERSIBLE ASPECTS
REISS, H
[J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (03) : 408 - 413
[7] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON
REISS, H
FULLER, CS
MORIN, FJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636
[8] REISS H, 1956, J CHEM PHYS, V25, P400
[9] VANVLECK, 1932, THEORY ELECTRIC MAGN
[10] 1960, NEW YORK AM PHYSICAL