SEMICONDUCTOR-HETEROSTRUCTURE-INTERFACE CONNECTION RULES

被引：11

作者：

AVERSA, C ^{[1
]}

SIPE, JE ^{[1
]}

机构：

[1] UNIV TORONTO,ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO M5S 1A7,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.47.6590

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We introduce a technique for the study of semiconductor heterostructures which is more general than the usual envelope-function approximation. This scheme accounts for material dependences in the Bloch functions, and also allows a full zone treatment of the constituent semiconductors. However, it involves only small-dimensional matrices, and thus remains computationally efficient. The presented formalism offers, at each energy, what can be considered a ''best choice'' flux-conserving interface connection rule between two semiconductors. As an illustration of the technique we consider the GAMMA-X scattering that occurs in GaAs/AlAs heterostructures.

引用

页码：6590 / 6597

页数：8

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